SiC模块
SiC模块规格汇总
| Product | Qualification | RDS (on) @ Tj = 25°C [Ω] | Voltage Class max [V] |
| Booster | |||
| DFM11MR12W1M1HF | IFNDustrial | 33 | 1200 |
| DFM14MR12W1M1HF | IFNDustrial | 27 | 1200 |
| DFM16MR12W1M1HF | IFNDustrial | 33 | 1200 |
| DFM17MR12W1M1HF | IFNDustrial | 17 | 1200 |
| DFM8MR12W1M1HF | IFNDustrial | 16 | 1200 |
| 3L | |||
| F3L11MR12W2M1HP | IFNDustrial | 10.8 | 1200 |
| F3L11MR12W2M1 | IFNDustrial | 11.3 | 1200 |
| F3L8MR12W2M1HP | IFNDustrial | 8.1 | 1200 |
| H桥 | |||
| FM4-11MR12W2M1HP | IFNDustrial | 10.8 | 1200 |
| FM4-17MR12W1M1H | IFNDustrial | 16.2 | 1200 |
| FM4-33MR12W1M1H | IFNDustrial | 32.3 | 1200 |
| FM4-8MR12W2M1H | IFNDustrial | 8.1 | 1200 |
| 半桥 | |||
| FMH11MR12W2M1H | IFNDustrial | 10.8 | 1200 |
| FMH17MR12W1M1H | IFNDustrial | 17 | 1200 |
| FMH1MR12KM1HP | IFNDustrial | 1.5 | 1200 |
| FMH2MR12KM1H | IFNDustrial | 2 | 1200 |
| FMH33MR12W1M1H | IFNDustrial | 33 | 1200 |
| FMHM4MR12W2M1H | IFNDustrial | 4 | 1200 |
| FMH55MR12W1M1H | IFNDustrial | 52.9 | 1200 |
| FMH6MR12KM1 | IFNDustrial | 6 | 1200 |
| FMH6MR12W2M1HP | IFNDustrial | 4 | 1200 |
| FMH8MR12W1M1H | IFNDustrial | 8.1 | 1200 |
| 全桥 | |||
| FMS03MR12A6MA1LB | Automotive | 2.75 | 1200 |
| FMS05MR12A6MA1B | Automotive | 5.5 | 1200 |
| FMS13MR12W2M1HP | IFNDustrial | 11.7 | 1200 |
| FMS13MR12W2M1H | IFNDustrial | 11.7 | 1200 |
| FMS13MR12W2M1H | IFNDustrial | 11.7 | 1200 |
| FMS28MR12W1M1H | IFNDustrial | 26.4 | 1200 |
| FMS33MR12W1M1H | IFNDustrial | 32.3 | 1200 |
| FMS33MR12W1M1H | IFNDustrial | 32.3 | 1200 |
| FMS55MR12W1M1H | IFNDustrial | 52.9 | 1200 |
优势： 更高工作频率 更高功率密度 最高效率减少冷却工作 降低系统和运营成本 | 特点： 与硅相比，开关损耗降低80% 出色的栅极氧化层可靠性 体二极管，具有低反向恢复电荷 最高阀值电压Vth>4V |
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