分立器件及驱动芯片
高压功率单管
SiC MOSFET 单管产品型号VDS [V]RDS (on) @ Tj = 25°C [Ω]ID @25°C [A]QualificationOperating Temperare [°C]VGW107N650SC65010724IFNDustri...
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| SiC MOSFET 单管 | ||||||
| 产品型号 | VDS [V] | RDS (on) @ Tj = 25°C [Ω] | ID @25°C [A] | Qualification | Operating Temperare [°C] | |
| VGW107N650SC | 650 | 107 | 24 | IFNDustrial | -55 | 175 |
| VGW72N650SC | 650 | 72 | 28 | IFNDustrial | -55 | 150 |
| VGW57N650SC | 650 | 57 | 35 | IFNDustrial | -55 | 175 |
| VGW57N650SC | 650 | 57 | 39 | IFNDustrial | -55 | 175 |
| VGW57N650SC | 650 | 57 | 35 | IFNDustrial | -55 | 175 |
| VGW48N650SC | 650 | 48 | 45 | IFNDustrial | -55 | 175 |
| VGW39N650SC | 650 | 39 | 50 | IFNDustrial | -55 | 175 |
| VGW27N650SC | 650 | 27 | 59 | IFNDustrial | -55 | 150 |
| VGW22N650SC | 650 | 22 | 64 | IFNDustrial | -55 | 175 |
| VGW140N120SC | 1200 | 140 | 19 | IFNDustrial | -55 | 175 |
| VGW90N120SC | 1200 | 90 | 26 | IFNDustrial | -55 | 175 |
| VGW45N120SC | 1200 | 45 | 52 | IFNDustrial | -55 | 175 |
| VGW40N120SC | 1200 | 40 | 55 | IFNDustrial | -55 | 175 |
| VGW30N120SC | 1200 | 30 | 70 | IFNDustrial | -55 | 175 |
| VGW20N120SC | 1200 | 20 | 98 | IFNDustrial | -55 | 175 |
| VGW14N120SC | 1200 | 14 | 127 | IFNDustrial | -55 | 175 |
| VGW07N120SC | 1200 | 7 | 225 | IFNDustrial | -55 | 175 |
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